IRF530N - Infineon Technologies
网页IRF530N. Overview. 100V Single N-Channel MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are …
IRF530N Datasheet (PDF) - International Rectifier
网页IRF530N Product details. Description. Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF530NPBF Infineon Technologies | Discrete Semiconductor …
网页IRF530NPBF – N-Channel 100 V 17A (Tc) 70W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
网页This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF530NPBF Infineon Technologies | Mouser
网页4 天之前 — IRF530NPBF Infineon Technologies MOSFETs MOSFT 100V 17A 90mOhm 24.7nC datasheet, inventory, & pricing.
网页IRF530NSPbF. D2Pak is suitable for high current applications because of its low internal. connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications.
IRF530N Datasheet (PDF) - NXP Semiconductors
网页GENERAL DESCRIPTION. N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package. 1. ’Trench’technology. 2. Low on-state resistance. 3. Fast switching. 4. Low thermal resistance. Similar Part No. - IRF530N. More results.
网页©2002 Fairchild Semiconductor Corporation IRF530N Rev. B PSPICE Electrical Model .SUBCKT IRF530N 2 1 3 ; rev 15 July 2001 CA 12 8 1.27e-9 CB 15 14 1.27e-9 CIN 6 8 7.20e-10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 117.8 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 …
Datasheet | DigiKey - Digi-Key Electronics
网页Philips Semiconductors Product specification. N-channel TrenchMOS transistor IRF530N. FEATURES SYMBOL QUICK REFERENCE DATA. • ’Trench’ technology. • Low on-state resistance VDSS = 100 V. • Fast switching. • Low thermal resistance ID = 17 A. RDS (ON) ≤ 110 mΩ. GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhance …
IRF530N(S,L)PbF Datasheet by Infineon Technologies
网页View datasheets for IRF530N(S,L)PbF by Infineon Technologies and other related components here.
跳至内容