网页S Series NPN Silicon Power Transistors. The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switch-mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features.
MJE13009 Datasheet (PDF) - STMicroelectronics
网页The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. SGS-THOMSON PREFERRED SALESTYPE.
13009 Datasheet, Equivalent, Cross Reference Search - All Transistors
网页Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK ...
13009 / MJE13009 Transistor Pinout, Equivalents, Uses, Specs, …
网页2022年6月22日 · 13009 or MJE13009 is a high voltage NPN power transistor designed to use in high voltage and other applications. This post describes 13009 transistor pinout, equivalents, uses, specs, features, explanation, where and how to use, and other useful information about this transistor.
MJE13009 Datasheet (PDF) - Mospec Semiconductor
网页Part #: MJE13009. Download. File Size: 179Kbytes. Page: 4 Pages. Description: POWER TRANSISTORS(12A,300-400V,100W). Manufacturer: Mospec Semiconductor.
MJE13009 datasheet(1/6 Pages) STMICROELECTRONICS
网页POWER TRANSISTORS(12A,300-400V,100W) New Jersey Semi-Conduct... MJE13009: 93Kb / 2P: SWJTCHMODE SERIES NPN POWER TRANSISTORS Motorola, Inc: MJE13009: 451Kb / 10P: 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS Central Semiconductor C... MJE13009: 330Kb / 3P: SILICON NPN TRANSISTORS ON Semiconductor: MJE13009: 451Kb / 10P: NPN ...
网页SWITCHMODE Series NPN Silicon Power Transistors. The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
General Purpose and Low VCE(sat) Transistors | MJE13009 - onsemi
网页Overview. The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Waiting. Product Overview.
MJE13009 onsemi | Discrete Semiconductor Products | DigiKey
网页MJE13009 – Bipolar (BJT) Transistor NPN 400 V 12 A 4MHz 2 W Through Hole TO-220 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
网页The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. Figure 1. Table 1.